IRF640 N-Channel Power MOSFET Transistor (200V – 0.15Ω – 18A) TO-220
EGP 18
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IRF640 N-Channel Power MOSFET Transistor (200V – 0.15Ω – 18A) TO-220 IRF640 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 150 W. Features:- Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 200V Continuous Drain Current (Id) 18A Drain-Source Resistance (Rds On) 0.15Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 67 nC Operating Temperature Range -55 ∼ +175°C Power Dissipation (Pd) 150W Related Documents:- IRF640 MOSFET Datasheet
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