2SK2025 N-Channel MOSFET Transistor 600V 4A TO-220AB

Description

2SK2025 N-Channel MOSFET Transistor 600V 4A TO-220AB The 2SK2025 is a high-performance N-channel MOSFET . Boasting a 600V drain-source voltage rating and a 4A continuous drain current capability, this transistor features a remarkably low maximum on-state resistance of 2.4Ω . It is housed in a standard, industry-recognized TO-220AB package outline , providing an optimal balance between power dissipation (up to 60W) and ease of board integration . Features High Speed Switching Low On-Resistance (Max 2.4Ω) No Secondary Breakdown Low Driving Power High Voltage (600V) Enhanced Gate Safety (V GS = ±30V Guarantee) Avalanche Proof Specifications Absolute Maximum Ratings (T C = 25°C unless specified) Parameter Symbol Rating Unit Drain-Source Voltage V DS 600 V Drain-Gate Voltage (R GS = 20kΩ) V DGR 600 V Continuous Drain Current I D 4 A Pulsed Drain Current I D(puls) 16 A Gate-Source Voltage V GS ±30 V Max. Power Dissipation P D 60 W Operating Channel Temperature T ch 150 °C Storage Temperature Range T stg -55 to +150 °C Electrical Characteristics (T C = 25°C unless specified) Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS =0V, I D =1mA 600 V Gate Threshold Voltage V GS(th) I D =1mA, V DS =V GS 2.5 3.0 3.5 V Zero Gate Voltage Drain Current I DSS V DS =600V, V GS =0V, T ch =25°C V DS =600V, V GS =0V, T ch =125°C 10 0.2 500 1.0 μA mA Gate-Source Leakage Current I GSS V GS =±30V, V DS =0V 10 100 nA Drain-Source On-Resistance R DS(on) I D =2A, V GS =10V 2.0 2.4 Ω Forward Transconductance g fs I D =2A, V DS =25V 2 4 S Input Capacitance C iss V DS =25V, V GS =0V, f=1MHz 1000 1500 pF Output Capacitance C oss V DS =25V, V GS =0V, f=1MHz 85 130 pF Reverse Transfer Capacitance C rss V DS =25V, V GS =0V, f=1MHz 20 30 pF Turn-On Delay Time t d(on) V CC =300V, I D =4A, V GS =10V, R GS =10Ω 20 30 ns Rise Time t r V CC =300V, I D =4A, V GS =10V, R GS =10Ω 15 25 ns Turn-Off Delay Time t d(off) V CC =300V, I D =4A, V GS =10V, R GS =10Ω 45 70 ns Fall Time t f V CC =300V, I D =4A, V GS =10V, R GS =10Ω 15 25 ns Avalanche Capability I AV L=100μH, T ch =25°C 4 A Reverse Diode Characteristics Parameter Symbol Test Conditions Min. Typ. Max. Unit Continuous Reverse Drain Current I DR 4 A Pulsed Reverse Drain Current I DRM 16 A Diode Forward On-Voltage V SD I F = 2 × I DR , V GS =0V, T ch =25°C 1.1 1.65 V Reverse Recovery Time t rr I F = I D , V GS =0V, -dI F /dt = 100A/μs, T ch =25°C 400 ns Reverse Recovery Charge Q rr I F = I D , V GS =0V, -dI F /dt = 100A/μs, T ch =25°C 2 μC Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Thermal Resistance (Channel to Air) R th(ch-a) 75 °C/W Thermal Resistance (Channel to Case) R th(ch-c) 2.08 °C/W Applications Switching Regulators Uninterruptible Power Supplies (UPS) DC-DC Converters General Purpose Power Amplifiers Package Content 1 x 2SK2025 N-Channel MOSFET Transistor 600V 4A TO-220AB DataSheet 2SK2025

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