IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220

Description

IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220 The IRFZ24N is a Fifth Generation HEXFET® power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This component combines fast switching speed with a ruggedized device design, providing designers with an incredibly efficient device for use in a wide variety of commercial and industrial applications. Features Advanced Process Technology Dynamic dv/dt Rating High Operating Temperature Fast Switching Fully Avalanche Rated Specifications Parameter Symbol Value Units Drain-to-Source Breakdown Voltage V DSS 55 V Continuous Drain Current (@ T C = 25°C) I D 17 A Continuous Drain Current (@ T C = 100°C) I D 12 A Pulsed Drain Current I DM 68 A Max Power Dissipation (@ T C = 25°C) P D 45 W Linear Derating Factor – 0.30 W/°C Gate-to-Source Voltage V GS ±20 V Static Drain-to-Source On-Resistance R DS(on) 0.07 Ω Single Pulse Avalanche Energy E AS 71 mJ Operating Junction Temperature Range T J -55 to +175 °C Thermal Resistance (Junction-to-Case) R θJC 3.3 (Max) °C/W Pin Configuration Applications DC-DC Converters Motor Control Circuits Solenoid and Relay Drivers General Purpose Power Switching Package Include: 1x IRFZ24N N-Channel Power MOSFET Transistor 55V 17A TO-220 Datasheet IRFZ24N

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