IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC

Description

IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC The IRFP054 N-Channel Power MOSFET is designed to handle high current loads while maintaining efficient switching performance. It operates by using a voltage-controlled gate to regulate current flow between the drain and source, making it ideal for high-power and fast-switching applications in modern electronic systems. Encased in a TO-247AC package, the IRFP054 provides excellent thermal dissipation and mechanical strength, allowing reliable operation in demanding environments when paired with proper heat sinking. This device is commonly found in SMPS designs, DC motor controllers, battery-powered systems, and industrial power electronics. Features: N-Channel enhancement-mode MOSFET. Designed for high-current power switching. Low conduction loss for high efficiency. Fast switching response. Rugged and reliable construction. Suitable for linear and switching applications. Through-hole mounting for strong mechanical support. Specifications: Parameter Min Typ Max Units Test Conditions Drain-to-Source Breakdown Voltage (V DSS) 60 – – V V GS = 0V, I D = 250µA Breakdown Voltage Temperature Coefficient (ΔV DSS/ΔT J) – 0.056 – V/°C Reference to 25°C, I D = 1mA Static Drain-to-Source On-Resistance (R DS(on)) – – 0.014 Ω V GS = 10V, I D = 54A Gate Threshold Voltage (V GS(th)) 2.0 – 4.0 V V DS = V GS, I D = 250µA Forward Transconductance (g fs) 25 – – S V DS = 25V, I D = 54A Drain-to-Source Leakage Current (I DSS) – – 25 µA V DS = 60V, V GS = 0V – – 250 µA V DS = 48V, V GS = 0V, T J = 150°C Gate-to-Source Forward Leakage (I GSS) – – 100 nA V GS = 20V Gate-to-Source Reverse Leakage (I GSS) – – -100 nA V GS = -20V Total Gate Charge (Q g) – – 160 nC I D = 64A Gate-to-Source Charge (Q gs) – – 48 nC V DS = 48V Gate-to-Drain (“Miller”) Charge (Q gd) – – 54 nC V GS = 10V Turn-On Delay Time (t d(on)) – 20 – ns V DD = 30V Rise Time (t r) – 160 – ns I D = 64A Turn-Off Delay Time (t d(off)) – 83 – ns R G = 6.2Ω Fall Time (t f) – 150 – ns R D = 0.45Ω Internal Drain Inductance (L D) – 5.0 – nH Between lead, 6 mm from package and center of die contact Internal Source Inductance (L S) – 13 – nH V GS = 0V Input Capacitance (C iss) – 4500 – pF V DS = 25V Output Capacitance (C oss) – 2000 – pF f = 1.0MHz Reverse Transfer Capacitance (C rss) – 300 – pF f = 1.0MHz Pinout: Pin No. Pin Name Description 1 Gate (G) Controls MOSFET switching 2 Drain (D) Main current conduction path 3 Source (S) Current return path Footprint: Applications: Switch-mode power supplies (SMPS). DC motor drivers and controllers. Power inverters and UPS systems. Battery management systems. High-current DC-DC converters. Industrial power control circuits. Packages: 1x IRFP054 N-Channel Power MOSFET Transistor 60V 70A TO-247AC. Documents: IRFP054 Datasheet.

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