2SB857 PNP Transistor 50V 4A TO-220
EGP 12
See other suppliers →Description
2SB857 PNP Transistor 50V 4A TO-220 The 2SB857 is a PNP silicon power transistor designed for low-frequency power amplifier and switching applications. With a −50V collector-emitter voltage and −4A collector current, it provides reliable performance in audio amplification, power control, and general-purpose analog circuits. Housed in a TO-220 package, the device supports efficient heat dissipation and easy mounting to heatsinks. It is commonly used as a complementary pair with 2SD1133 / 2SD1134, making it suitable for push-pull amplifier designs and power stages. Features PNP power transistor for amplification and switching. −50V collector-emitter voltage (V CEO ). −4A continuous collector current capability. Low saturation voltage for efficient operation. Designed for low-frequency power amplifier applications. TO-220 package for good thermal performance. Complementary pair with 2SD1133 / 2SD1134. Specifications Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO -70 V Collector to emitter voltage V CEO -50 V Emitter to base voltage V EBO -5 V Collector current I C -4 A Collector peak current I C(peak) -8 A Collector power dissipation P C *1 40 W Junction temperature T j 150 °C Storage temperature T stg -45 to +150 °C Note: 1. Value at T c = 25°C Applications Audio power amplifiers (push-pull stages). Low-frequency power amplification. Switching regulators and control circuits. Motor drivers and relay control. General-purpose power electronics. Documents Datasheet 2SB857
From the supplier's page.
makhzan doesn't sell — every offer opens the supplier's own site.