TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B

Description

TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B The 2SK2700 is a Silicon N-Channel MOSFET Type ( π–MOSIII ) Field Effect Transistor manufactured by TOSHIBA . Operating in enhancement mode, this component is engineered to provide high forward transfer admittance while maintaining low leakage current . Features Low Drain-Source ON Resistance: R DS (ON) = 3.7 Ω (typ.) High Forward Transfer Admittance: | Y fs | = 2.6 S (typ.) Low Leakage Current: I DSS = 100 μA (max) ( V DS = 720 V) Enhancement Operation: V th = 2.0 to 4.0 V ( V DS = 10 V, I D = 1 mA) Specifications Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DSS 900 V Drain-gate voltage ( R GS = 20 kΩ) V DGR 900 V Gate-source voltage V GSS ±30 V Drain current (DC) I D 3 A Drain current (Pulse) I DP 9 A Drain power dissipation (Tc = 25°C) P D 40 W Single pulse avalanche energy E AS 295 mJ Avalanche current I AR 3 A Repetitive avalanche energy E AR 4 mJ Channel temperature T ch 150 °C Storage temperature range T stg -55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 3.125 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±30 V, V DS = 0 V — — ±10 μA Gate-source breakdown voltage V (BR)GSS I G = ±10 μA, V DS = 0 V +30 — — V Drain cut-off current I DSS V DS = 720 V, V GS = 0 V — — 100 μA Drain-source breakdown voltage V (BR)DSS I D = 10 mA, V GS = 0 V 900 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain-source ON resistance R DS (ON) V GS = 10 V, I D = 1.5 A — 3.7 4.3 Ω Forward transfer admittance |Y fs | V DS = 20 V, I D = 1.5 A 0.65 2.6 — S Input capacitance C iss V DS = 25 V, V GS = 0 V, f = 1 MHz — 750 — pF Reverse transfer capacitance C rss — 10 — pF Output capacitance C oss — 70 — pF Rise time t r V DD ≈ 200 V, I D = 1.5 A, V GS = 10 V, V out , R L = 133 Ω, R G = 50 Ω, Duty ≤ 1%, t w = 10 μs — 15 — ns Turn-on time t on — 55 — ns Fall time t f — 30 — ns Turn-off time t off — 110 — ns Total gate charge (gate-source plus gate-drain) Q g V DD ≈ 400 V, V GS = 10 V, I D = 3 A — 25 — nC Gate-source charge Q gs — 13 — nC Gate-drain (“miller”) charge Q gd — 12 — nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current I DR — — — 3 A Pulse drain reverse current I DRP — — — 9 A Forward voltage (diode) V DSF I DR = 3 A, V GS = 0 V — — -1.9 V Reverse recovery time t rr I DR = 3 A, V GS = 0 V, d I DR /dt = 100 A/μs — 1100 — ns Reverse recovery charge Q rr — 7.2 — μC Applications Chopper Regulators DC-DC Converters Motor Drive Applications Package Content 1 x TOSHIBA 2SK2700 N-Channel MOSFET Transistor 900V 3A 2-10R1B DataSheet 2SK2700

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