IRF520 N-Channel Power MOSFET TO-220 100V-9.2A-0.27Ω

Description

IRF520 N-Channel Power MOSFET TO-220 100V-9.2A-0.27Ω The IRF520 is a third-generation N-channel HEXFET power MOSFET from International Rectifier, representing an advanced design that effectively balances fast switching performance, ruggedness, and low on-resistance. It is engineered using a vertical DMOS structure, which is the foundation of the HEXFET technology, enabling high efficiency and robust power handling. This transistor functions as a voltage-controlled device, where a voltage applied to the gate terminal relative to the source allows current to flow between the drain and source, making it an ideal solid-state switch for power electronics. This MOSFET is characterized by its ability to switch currents rapidly, which is essential for high-frequency applications like switch-mode power supplies and motor controllers. The device is ruggedized, being rated for repetitive avalanche, meaning it can withstand short periods of over-voltage stress that drive it into the breakdown region without being damaged. This built-in durability, combined with a high operating junction temperature of 175°C, makes it a reliable component in demanding environments. Housed in the industry-standard TO-220 package, the IRF520 is designed for easy mounting onto heat sinks, which is crucial for dissipating the heat generated during operation. The package offers a low thermal resistance from the silicon junction to the case, allowing the transistor to handle significant power levels. Its simple drive requirements and ease of paralleling make it a versatile and cost-effective choice for a wide range of commercial and industrial power applications. Features: Dynamic dv/dt Rating. Repetitive Avalanche Rated. 175°C Operating Temperature. Fast Switching. Ease of Paralleling. Simple Drive Requirements. Third Generation HEXFET Technology. Low Thermal Resistance. Cost-Effective. Specifications: Specification Value Drain-Source Voltage (VDSS): 100 V Continuous Drain Current (ID) @ Tc=25°C: 9.2 A Max. On-Resistance (RDS(on)) @ VGS=10V: 0.27 Ω Gate Threshold Voltage (VGS(th)): 2.0 – 4.0 V Max. Power Dissipation (PD) @ Tc=25°C: 60 W Gate-Source Voltage (VGS): ±20 V Total Gate Charge (Qg): 16 nC (typ.) Operating Junction Temperature (TJ): -55 to +175 °C Package: TO-220 Pin Configuration: Pin Number Pin Name Description 1 Source Current flows out through Source 2 Gate Controls the biasing of the MOSFET 3 Drain Current flows in through Drain Applications: Switching high power devices Control speed of motors LED dimmers or flashers High Speed switching applications Converters or Inverter circuits Package Contents: 1x IRF520 N-Channel Power MOSFET TO-220 100V-9.2A-0.27Ω Datasheet

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