IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC

Description

IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC The IRFPF50 is a Third Generation HEXFET Power MOSFET from International Rectifier, designed to provide a combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. Compared with the earlier TO-218 package, the TO-247 provides an isolated central mounting hole and greater creepage distance between pins, helping meet the requirements of most safety specifications. Features Dynamic dv/dt rating Repetitive avalanche rated Isolated central mounting hole Fast switching Ease of paralleling Simple drive requirements 900V drain-to-source breakdown voltage 6.7A continuous drain current at TC = 25°C Low on-resistance TO-247AC package with isolated mounting hole Specifications General Part Number IRFPF50 Manufacturer International Rectifier (IOR) Device Type HEXFET Power MOSFET Package TO-247AC Absolute Maximum Ratings Continuous Drain Current, ID @ TC = 25°C, VGS = 10V 6.7 A Continuous Drain Current, ID @ TC = 100°C, VGS = 10V 4.2 A Pulsed Drain Current, IDM 27 A Power Dissipation @ TC = 25°C 190 W Linear Derating Factor 1.5 W/°C Gate-to-Source Voltage, VGS ±20 V Single Pulse Avalanche Energy, EAS 880 mJ Avalanche Current, IAR 6.7 A Repetitive Avalanche Energy, EAR 19 mJ Peak Diode Recovery dv/dt 1.5 V/ns Operating Junction and Storage Temperature Range -55 to +150 °C Soldering Temperature, for 10 seconds 300 °C, 1.6 mm from case Mounting Torque, 6-32 or M3 screw 10 lb-in (1.1 nominal) Thermal Resistance Junction-to-Case, RθJC 0.65 °C/W max. Case-to-Sink, Flat, Greased Surface, RθCS 0.24 °C/W typ. Junction-to-Ambient, RθJA 40 °C/W max. Electrical Characteristics @ TJ = 25°C Drain-to-Source Breakdown Voltage, V(BR)DSS 900 V min. (VGS = 0V, ID = 250µA) Breakdown Voltage Temperature Coefficient 1.2 V/°C typ. (Reference to 25°C, ID = 1mA) Static Drain-to-Source On-Resistance, RDS(on) 1.6 Ω max. (VGS = 10V, ID = 4.0A) Gate Threshold Voltage, VGS(th) 2.0 V min., 4.0 V max. (VDS = VGS, ID = 250µA) Forward Transconductance, gfs 4.9 S (VDS = 100V, ID = 4.0A) Drain-to-Source Leakage Current, IDSS 100 µA max. (VDS = 900V, VGS = 0V) Drain-to-Source Leakage Current, IDSS @ TJ = 125°C 500 µA max. (VDS = 720V, VGS = 0V) Gate-to-Source Forward Leakage, IGSS 100 nA max. (VGS = 20V) Gate-to-Source Reverse Leakage, IGSS -100 nA max. (VGS = -20V) Gate Charge and Switching Total Gate Charge, Qg 200 nC max. (ID = 6.7A, VDS = 360V, VGS = 10V) Gate-to-Source Charge, Qgs 24 nC max. (ID = 6.7A, VDS = 360V, VGS = 10V) Gate-to-Drain Miller Charge, Qgd 110 nC max. (ID = 6.7A, VDS = 360V, VGS = 10V) Turn-On Delay Time, td(on) 20 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) Rise Time, tr 34 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) Turn-Off Delay Time, td(off) 130 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) Fall Time, tf 37 ns (VDS = 450V, ID = 6.7A, Ra = 6.2Ω, Rp = 67Ω) Inductance and Capacitance Internal Drain Inductance, LD 5.0 nH (between lead 6 mm from package and center of die contact) Internal Source Inductance, LS 13 nH (between lead 6 mm from package and center of die contact) Input Capacitance, Ciss 2900 pF (VGS = 0V, VDS = 25V, f = 1MHz) Output Capacitance, Coss 270 pF (VGS = 0V, VDS = 25V, f = 1MHz) Reverse Transfer Capacitance, Crss 92 pF (VGS = 0V, VDS = 25V, f = 1MHz) Source-Drain / Body Diode Ratings Continuous Source Current, IS 6.7 A Pulsed Source Current, ISM 27 A Diode Forward Voltage, VSD 1.8 V max. (TJ = 25°C, IS = 6.7A, VGS = 0V) Reverse Recovery Time, trr 610 ns typ., 920 ns max. (TJ = 25°C, IF = 6.7A, di/dt = 100A/µs) Reverse Recovery Charge, Qrr 3.2 µC typ., 4.8 µC max. (TJ = 25°C, IF = 6.7A, di/dt = 100A/µs) Forward Turn-On Time Intrinsic turn-on time is negligible; turn-on is dominated by Ls + Lp Applications Commercial-industrial applications where higher power levels preclude the use of TO-220 devices Designs requiring fast switching, ruggedized device design, low on-resistance, ease of paralleling, and simple drive requirements Package Content 1 x IRFPF50 HEXFET Power MOSFET 900V 6.7A TO-247AC DataSheet IRFPF50

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