YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247

Description

YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247 The YGW40N120T3 is a high-voltage trench field-stop IGBT designed for power conversion applications. Rated for a collector-emitter breakdown of 1200 V and a continuous collector current of 40 A (with higher short-term/current ratings under controlled thermal conditions), it targets demanding industrial environments where both blocking voltage and current capability are required. The device is offered in a TO-247 package for ease of mounting and thermal handling, making it suitable for discrete module builds and repair tasks. Built on Trench-Stop technology, the YGW40N120T3 emphasizes tight parameter distribution and rugged, temperature-stable behavior. It provides a relatively low VCE(sat) at full rated current and shows a positive temperature coefficient in saturation voltage, which aids safe paralleling. The device also offers enhanced avalanche capability and a specified short-circuit withstand time (10 μs), important for protecting systems against transient faults. Switching characteristics are optimized for medium-speed power conversion: gate charge and switching energies are specified at high voltage and current conditions, enabling designers to estimate drive losses and thermal budget. The integrated anti-parallel diode exhibits solid forward characteristics and controlled reverse-recovery behavior, making the part appropriate for frequency converters, motor drives, and other inverter applications where conduction and recovery performance matter. Features: High breakdown voltage up to 1200 V. Trench-Stop technology for tight parameter distribution and high ruggedness. Short circuit withstand time: 10 μs. Low VCE(sat) for reduced conduction losses. Positive temperature coefficient in VCE(sat) facilitates safe paralleling. Enhanced avalanche capability. Specifications: Parameter Specification Model / Package: YGW40N120T3 – TO-247 Collector-Emitter Breakdown Voltage (BVCES): 1200 V Collector Current (IC): 40 A (TC = 100°C); DC up to 80 A at TC = 25°C (thermal limited) Pulsed Collector Current (ICM): 160 A (VGE = 15 V, tp limited by Tjmax) VCE(sat): 1.75 V (IC = 40 A, VGE = 15 V, Tj = 25°C); ~2.35 V at 150°C Gate threshold (VGE(th)): 5.2 – 6.5 V Continuous Gate-Emitter Voltage: ±20 V (transient ±30 V) Short Circuit Withstand Time: 10 μs (VGE = 15 V, VCE ≤ 600 V) Power Dissipation (Tj = 25°C): 416 W Operating Junction Temperature (Tj): −40 … +150 °C Thermal Resistance, junction-to-case (IGBT): 0.3 K/W Diode forward voltage (VFM): ~1.8 V (IF = 40 A) Reverse recovery time (Trr): ~350 ns (IF = 40 A, VR = 600 V, di/dt = 600 A/μs) Gate charge (QG): ~260 nC (VCC = 960 V, IC = 40 A, VGE = 15 V) Input capacitance (Ciss): ~6100 pF (VCE = 25 V, f = 1 MHz) Switching times (inductive load): td(on) ~80 ns; tr ~50 ns; td(off) ~180 ns; tf ~80 ns (conditions vary) Pinout Diagram: Footprint Diagram: Applications: Solar Power Inverters. Uninterruptible Power Supplies (UPS). Motor Drives and Industrial Controls. Welding Equipment. Induction Heating Systems. Switch-Mode Power Supplies (SMPS). Electric Vehicle Charging Stations. Package Contents: 1x YGW40N120T3 IGBT Power Transistor 1200V 40A TO-247. Datasheet

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