IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω
EGP 25
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IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity P-Channel Drain-Source Breakdown Voltage (Vds) -55V Continuous Drain Current (Id) -31A Drain-Source Resistance (Rds On) 60mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 63 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 110W Related Documents IRF5305 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.
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