NHDTC123JTR
NHDTC123JTR QJt 100@10mA,5V 1 NPN – Pre Biased 250mW 100mA 80V 100nA SOT-23(TO-236) SMD Digital Transistors
EGP 12
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Manufacturer Nexperia Mfr. Part # NHDTC123JTR Package SOT-23(TO-236) Datasheet Nexperia NHDTC123JTR Description 100@10mA,5V 1 NPN – Pre Biased 250mW 100mA 80V 100nA SOT-23(TO-236) Digital Transistors ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Digital Transistors Datasheet Nexperia NHDTC123JTR RoHS DC Current Gain (hFE@Ic, Vce) 100@10mA,5V Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 100mV@500uA,10mA Transistor Type 1 NPN – Pre Biased Transition Frequency (fT) 170MHz Power Dissipation (Pd) 250mW Collector Current (Ic) 100mA Collector-Emitter Breakdown Voltage (Vceo) 80V Collector Cut-Off Current (Icbo) 100nA
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