Bipolar Transistors – BJT SMD BC847BPN,125 13t SOT363 (TSSOP-6)
EGP 10
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Manufacturer Nexperia Mfr. Part # BC847BPN,125 Package TSSOP-6 Datasheet Nexperia BC847BPN,125 Description 15nA 45V 300mW 100mA 200@2mA,5V 100MHz 300mV@100mA,5mA 1 NPN,1 PNP +150℃@(Tj) TSSOP-6 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Transistors/Bipolar Transistors – BJT Datasheet Nexperia BC847BPN,125 RoHS Collector Cut-Off Current (Icbo) 15nA Collector-Emitter Breakdown Voltage (Vceo) 45V Power Dissipation (Pd) 300mW Collector Current (Ic) 100mA DC Current Gain (hFE@Ic,Vce) 200@2mA,5V Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,5mA Transistor Type 1 NPN,1 PNP Operating Temperature +150℃@(Tj)
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