BC637 – High Current NPN Transistor (60V, 1A)
EGP 0.75
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BC637 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. Features:- Advanced process technology Low error voltage Fast switching speed Full-voltage operation High power and current handling capability Detailed Specifications:- Transistor Polarity NPN Collector-Emitter Breakdown Voltage (BVCEO) 60V Collector-Emitter Voltage (VCEO) 60V Emitter-Base Voltage (VEBO) 5V Continuous Collector Current (IC) 1A Base Current (IB) 100mA Transition Frequency (fT) 100MHz DC Current Gain (hFE) 40-160 Operating Temperature Range -65 – 150°C Collector Power Dissipation (PC) 1W Related Documents:- BC637 Transistor Datasheet
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