IR2101S Half Bridge Gate Driver SMD IC SOIC-8

Description

IR2101S Half Bridge 2 130mA 100ns 50ns 10V~20V 270mA SOIC-8 Gate Drivers SMD IC The IR2101(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTLoutput, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune. • Gate drive supply range from 10 to 20V. • Under voltage lockout. • 3.3V, 5V, and 15V logic input compatible. • Matched propagation delay for both channels. • Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102). • Also available LEAD-FREE. Specifications: Type Description Category Gate Drivers Package SOIC-8 Driven Configuration Half Bridge Operating Temperature -40℃~+150℃@(Tj) Number of Drivers 2 Load Type MOSFET ; IGBT Current – Output High(IOH) 130mA Rise Time 100ns Fall Time 50ns Voltage – Supply 10V~20V Current – Output Low(IOL) 270mA Applications: Switch-Mode Power Supplies (SMPS). Motor Drives and Control. Uninterruptible Power Supplies (UPS). Solar Inverters. Battery-Powered Inverters. Class D Audio Amplifiers. Induction Heating and RF Applications. Package Contents: 1 X IR2101S Half Bridge Gate Driver SMD IC SOIC-8 Datasheet: IR2101S

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