2N3055 NPN Power Transistor 60V 15A TO-3 (Original)

Description

2N3055 NPN Power Transistor 60V 15A TO-3 (Original) The 2N3055 NPN Power Transistor 60V 15A TO-3 (Original) is a silicon Epitaxial-Base Planar NPN transistor designed for reliable power handling in electronic circuits. It is mounted in a rugged JEDEC TO-3 metal case, which provides strong mechanical protection and effective heat transfer for high-power applications. This transistor is widely used where stable current control and dependable switching performance are required. According to the PDF, the 2N3055 is intended for power switching circuits, series regulators, shunt regulators, output stages, and high-fidelity amplifier designs. It supports a collector-emitter voltage of 60V and a collector current of 15A, making it suitable for medium-to-high power applications. Its 115W total power dissipation rating at case temperature up to 25°C makes it effective for circuits that require strong thermal performance. Features : Original 2N3055 NPN silicon power transistor. Silicon Epitaxial-Base Planar transistor structure. Mounted in a strong JEDEC TO-3 metal case. Suitable for power switching circuits. Suitable for series and shunt regulator circuits. Suitable for output stages and high-fidelity amplifiers. Collector-emitter voltage rating of 60V. Collector current rating up to 15A. Total power dissipation up to 115W at Tc ≤ 25°C. Maximum operating junction temperature up to 200°C. Complementary PNP transistor type is MJ2955. STMicroelectronics preferred sales type. Specifications : Specification Value Product Type: NPN Power Transistor Model Number: 2N3055 Transistor Material: Silicon Technology: Epitaxial-Base Planar Package Type: TO-3 Metal Case Collector-Base Voltage VCBO: 100V Collector-Emitter Voltage VCER: 70V Collector-Emitter Voltage VCEO: 60V Emitter-Base Voltage VEBO: 7V Collector Current IC: 15A Base Current IB: 7A Total Power Dissipation Ptot: 115W at Tc ≤ 25°C Storage Temperature Tstg: -65°C to 200°C Maximum Junction Temperature Tj: 200°C Thermal Resistance Junction-Case Rthj-case: 1.5°C/W Max Collector Cut-off Current ICEX: 1mA Max at VCE = 100V Collector Cut-off Current ICEX at Tj = 150°C: 5mA Max at VCE = 100V Collector Cut-off Current ICEO: 0.7mA Max at VCE = 30V Emitter Cut-off Current IEBO: 5mA Max at VEB = 7V Collector-Emitter Sustaining Voltage VCEO(sus): 60V Min Collector-Emitter Sustaining Voltage VCER(sus): 70V Min Collector-Emitter Saturation Voltage VCE(sat): 1V Max at IC = 4A, IB = 400mA Collector-Emitter Saturation Voltage VCE(sat): 3V Max at IC = 10A, IB = 3.3A Base-Emitter Voltage VBE: 1.8V Max DC Current Gain hFE: 20 to 70 at IC = 4A DC Current Gain hFE: 5 Min at IC = 10A Transition Frequency fT: 3MHz Second Breakdown Collector Current Is/b: 2.87A at VCE = 40V Pulse Test Condition: 300µs pulse duration, 1.5% duty cycle Pin Configuration: Pin Number Pin Name Description 1 Base (B) Normally used as the trigger to turn ON the transistor 2 Emitter (E) Normally connected to GROUND TAB or CASE Collector (C) Normally connected to LOAD Applications: Power switching circuits. Amplifier circuits. PWM applications. Regulator circuits. Switch mode power supply. Signal Amplifiers. Package Contents: 1x 2N3055 NPN Power Transistor 60V 15A TO-3 (Original) Datasheet

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