BU508AF BJT NPN Power Transistor 8A 700V

Description

BU508AF BJT NPN Power Transistor 8A 700V The BU508AF is a silicon NPN power transistor engineered as a rugged switching device for high-voltage applications. Its construction emphasises robustness against high collector-emitter stresses, delivering a guaranteed collector-emitter sustaining voltage (VCEO(SUS)) of 700 V minimum. Packaged and specified for power-handling environments, the device is intended to survive the demanding electrical and thermal conditions found in deflection and other high-voltage stages. Electrically, the BU508AF is characterized by fast switching performance and controlled saturation behavior the datasheet lists low saturation voltages under defined drive conditions and tight lot-to-lot variation to ensure consistent switching across production batches. The transistor’s gain behavior is specified across low- and high-current points so designers can predict drive requirements and switching margins when it is used in pulse or flyback-type circuits. The device is specified with conservative thermal and absolute-maximum ratings (including 60 W collector dissipation at TC=25°C and a junction temperature limit of 150°C) to promote long-term reliability in power assemblies. Mechanical and thermal design guidance in the datasheet helps ensure the BU508AF is mounted and cooled properly to meet its performance and lifetime expectations in consumer TV horizontal-deflection and similar high-voltage circuits. Features: Collector-Emitter Sustaining Voltage VCEO(SUS) = 700 V (Min). High switching speed. Minimum lot-to-lot variations for consistent, reliable operation. Specifications: Parameter Condition / Notes Value VCES (Collector-Emitter Voltage, VBE=0): Absolute maximum 1500 V VCEO (Collector-Emitter Voltage): Absolute maximum / VCEO(SUS) specified 700 V VEBO (Emitter-Base Voltage): Absolute maximum 5 V IC (Collector Current, continuous): Ta = 25°C 8 A ICM (Collector Current, peak): Non-repetitive 15 A IB (Base Current, continuous): Absolute max 4 A IBM (Base Current, peak): Absolute max 6 A PC (Collector Power Dissipation): @ TC = 25°C 60 W TJ (Junction Temperature): Maximum 150 °C Tstg (Storage Temp. Range): −65 to +150 °C Rth j-c (Thermal resistance junction case): 2.5 °C/W VCE(sat) (Collector-Emitter sat. voltage): IC = 4.5 A; IB = 2.0 A 1.0 V (max) VBE(sat) (Base-Emitter sat. voltage): IC = 4.5 A; IB = 2.0 A 1.5 V (max) ICES (Collector cutoff current): VCE = 1500 V; VBE = 0 1.0 mA (typ); 2.0 mA @ TC=125°C IEBO (Emitter cutoff current): VEB = 5.0 V; IC = 0 10 mA (max) hFE-1 (DC current gain): IC = 0.1 A; VCE = 5 V 6 – 30 hFE-2 (DC current gain): IC = 4.5 A; VCE = 5 V 2.25 (typ) COB (Output capacitance): IE = 0; VCB = 10 V; f = 0.1 MHz 125 pF fT (Current-gain bandwidth): IC = 0.1 A; VCE = 5 V 7 MHz Pinout Diagram: Footprint: Applications: Horizontal deflection circuits of color TV receivers. Package Contents: 1x BU508AF BJT NPN Power Transistor 8A 700V Datasheet

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