IRF460 N-Channel MOSFET 20A-500V-0.27Ohm
EGP 25
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IRF460 N-Channel MOSFET 20A-500V-0.27Ohm The IRF460 is a three-terminal silicon device built with an N-Channel enhancement mode configuration. It is designed to handle high current and high voltage for robust power management applications. The device is engineered to provide an optimal balance of fast switching speed, rugged design, and low conduction losses, making it suitable for modern, energy-efficient power electronics. Features: Low On-State Resistance: RDS(ON) = 0.27Ω at VGS = 10V High Voltage Rating: VDSS = 500V High Current Capability: Continuous Drain Current (ID) = 20A Specifications: Parameter Symbol Value Unit Drain-to-Source Voltage V <sub> DSS </sub> 500 V Continuous Drain Current I <sub> D </sub> 20 A Max. On-State Resistance R <sub> DS(ON) </sub> 0.27 Ω Gate Threshold Voltage (Max.) V <sub> GS(th) </sub> 4 V Total Gate Charge (Max.) Q <sub> G </sub> 210 nC Max. Power Dissipation (T <sub> C </sub> =25°C) P <sub> D </sub> 250 W Operating Junction Temperature T <sub> J </sub> -55 to +150 °C Package Options – TO-247AB Pin Configuration: Applications: BMS Circuits UPS Circuits Switch Mode Power Supplies DC to DC converters AC to DC converters Motor Drivers Solar Power Supplies Solar Chargers Battery Chargers Circuits Audio Amplification Applications Package Include: 1x IRF460 N-Channel MOSFET 20A-500V-0.27Ohm IRF460 Datasheet
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