IRFP260N N-Channel Power MOSFET Transistor TO-247 200v 50A
EGP 65
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IRFP260N N-Channel Power MOSFET Transistor TO-247 200v 50A IRFP260N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 200V Continuous Drain Current (Id) 50A Drain-Source Resistance (Rds On) 0.04Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 234 nC Operating Temperature Range -55 – 150°C Power Dissipation (Pd) 300W Related Documents IRFP260N MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.
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