2SK1507 N-Channel MOSFET Transistor 600V 9A TO-220

Description

2SK1507 N-Channel MOSFET Transistor 600V 9A TO-220 The 2SK1507 is an N-channel silicon power MOSFET designed specifically for high-speed power switching applications including switching regulators, DC-DC converters, and general purpose power amplifiers. This robust power MOSFET delivers reliable performance in demanding power electronics environments, featuring a drain-source voltage rating of 600V and a continuous drain current capability of 9A. The 2SK1507 is engineered with advanced MOS technology to ensure low on-state resistance and excellent thermal stability, making it an ideal choice for engineers and hobbyists working on power conversion and switching projects. Its TO-220 through-hole package provides straightforward mounting and effective heat dissipation for medium-power applications. The device is avalanche-proof and features a ±30V gate-source voltage guarantee for enhanced reliability. Features High speed switching capability. Low drain-source on-state resistance for minimal conduction losses. No secondary breakdown mechanism ensures robust operation. Low driving power requirement. High voltage capability with 600V drain-source breakdown voltage. Gate-source voltage guaranteed to ±30V. Avalanche-proof design for enhanced ruggedness. Wide operating temperature range from -55°C to +150°C. Specifications: Parameter Value Transistor Type N-Channel MOSFET Drain-Source Voltage (VDSS) 600V Gate-Source Voltage (VGSS) ±30V Continuous Drain Current (ID) 9A Pulsed Drain Current (ID(pulse)) 27A Continuous Reverse Drain Current (IDR) 9A Maximum Power Dissipation (PD) 50W Drain-Source On-State Resistance (RDS(on)) 0.85Ω (Typ.) / 1.0Ω (Max.) Drain-Source Breakdown Voltage (V(BR)DSS) 600V (Min.) Gate Threshold Voltage (VGS(th)) 2.5V (Min.) / 3.5V (Typ.) / 5.0V (Max.) Zero Gate Voltage Drain Current (IDSS) 10μA (Typ.) / 500μA (Max.) Gate-Source Leakage Current (IGSS) 10nA (Typ.) / 100nA (Max.) Forward Transconductance (gfs) 4.0S (Min.) / 6.0S (Typ.) Input Capacitance (Ciss) 1200pF (Typ.) / 1800pF (Max.) Output Capacitance (Coss) 150pF (Typ.) / 230pF (Max.) Reverse Transfer Capacitance (Crss) 60pF (Typ.) / 90pF (Max.) Turn-On Delay Time (td(on)) 30ns (Typ.) / 45ns (Max.) Rise Time (tr) 80ns (Typ.) / 120ns (Max.) Turn-Off Delay Time (td(off)) 160ns (Typ.) / 240ns (Max.) Fall Time (tf) 80ns (Typ.) / 120ns (Max.) Diode Forward On-Voltage (VSD) 1.1V (Typ.) / 1.5V (Max.) Reverse Recovery Time (trr) 500ns (Typ.) Thermal Resistance (Rth(ch-c)) 2.5°C/W Storage Temperature Range -55°C to +150°C Channel Temperature (Tch) 150°C (Max.) Package Type TO-220 Mounting Style Through-Hole Applications: Switching regulator designs. Low power supplies (LPS). DC-DC converter circuits. General purpose power amplifier applications. High speed power switching. Power management systems. Package Include: 1x 2SK1507 N-Channel MOSFET Power Transistor. Datasheet

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