IRFD010 N-Channel HEXFET Power MOSFET 50V 1.7A DIP-4

Description

IRFD010 N-Channel HEXFET Power MOSFET 50V 1.7A DIP-4 The IRFD010 leverages advanced HEXFET technology to achieve very low on-state resistance combined with high transconductance and great device ruggedness . It inherits all the core advantages of standard MOSFETs, including simple voltage control, ultra-fast switching, ease of paralleling, and highly stable electrical parameters across temperature variations . Features Optimized for Automatic Insertion Space-Saving Design High Efficiency Design Flexibility Robust Performance Specifications Absolute Maximum Ratings Symbol Parameter Value Units / Conditions V DS Drain Source Voltage 50 V V DGR Drain Gate Voltage ( R GS = 20 kΩ ) 50 V I D @ 25°C Continuous Drain Current 1.7 A, T C = 25°C I D @ 100°C Continuous Drain Current 1.1 A, T C = 100°C I DM Pulsed Drain Current 11 A V GS Gate Source Voltage ±20 V P D @ 25°C Max. Power Dissipation 1 W, T C = 25°C – Linear Derating Factor 0.0082 W/K (W/°C) I LM Inductive Current, Clamped 14 A, L = 100 μH I L Unclamped Inductive Current (Avalanche Current) 1.5 A T J , T stg Operating Junction and Storage Temperature Range -55 to 150 °C – Lead Temperature (Soldering) 300 °C, 1.6mm from case for 10s Electrical Characteristics (@ T C = 25°C ) Symbol Parameter Min Typ Max Units BV DSS Drain Source Breakdown Voltage 50 – – V (V GS = 0V, I D = 250 μA) V GS(th) Gate Threshold Voltage 2.0 – 4.0 V (V DS = V GS , I D = 250 μA) I GSS Gate-Source Leakage Forward – – 500 nA (V GS = 20V) I GSS Gate-Source Leakage Reverse – – -500 nA (V GS = -20V) I DSS Zero Gate Voltage Drain Current – – 250 μA (V DS = Max Rating, V GS = 0V) I DSS High Temp. Zero Gate Voltage Drain Current – – 1000 μA (0.8 × Max V DS , V GS = 0V, T C = 125°C) I D(on) On-State Drain Current 1.7 – – A (V DS > I D(on) × R DS(on)max , V GS = 10V) R DS(on) Static Drain-Source On-State Resistance – 0.16 0.20 Ω (V GS = 10V, I D = 0.88A) g fs Forward Transconductance 2.1 3.2 – S (V DS = 2 × V GS , I DS = 3.6A) Dynamic, Switching & Thermal Characteristics Symbol Parameter Min Typ Max Units C iss Input Capacitance – 250 – pF (V GS = 0V, V DS = 25V, f = 1.0 MHz) C oss Output Capacitance – 150 – pF C rss Reverse Transfer Capacitance – 29 – pF t d(on) Turn-On Delay Time – 11 17 ns (V DD = 25V, I D = 7.2A, R G = 25Ω, R D = 3.3Ω) t r Rise Time – 33 50 ns t d(off) Turn-Off Delay Time – 12 18 ns t f Fall Time – 23 35 ns Q g Total Gate Charge – 8.8 13 nC (V GS = 10V, I D = 7.2A Max Rating) Q gs Gate-Source Charge – 2.2 3.3 nC Q gd Gate-Drain (“Miller”) Charge – 2.6 3.9 nC L D Internal Drain Inductance – 4.0 – nH (6mm from package to center of die) L S Internal Source Inductance – 6.0 – nH (6mm from package to source bonding pad) R thJA Thermal Resistance, Junction-to-Ambient – 120 – K/W (Typical socket mount) Source-Drain Diode Ratings & Characteristics Symbol Parameter Min Typ Max Units I S Continuous Source Current (Body Diode) – – 1.7 A I SM Pulse Source Current (Body Diode) – – 14 A V SD Diode Forward Voltage – – 1.6 V (T J = 25°C, I S = 1.7A, V GS = 0V) t rr Reverse Recovery Time 41 86 190 ns (T J = 25°C, I F = 7.2A, dI F /dt = 100A/μs) Q RR Reverse Recovered Charge 0.15 0.33 0.78 μC Applications Computer mainboards and peripheral circuit boards . Printers and office automation equipment . Telecommunications infrastructure and networking hardware . Consumer electronics and general-purpose power switching products . Package Content 1 x IRFD010 N-Channel HEXFET Power MOSFET 50V 1.7A DIP-4 DataSheet IRFD010

From the supplier's page.