IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247

Description

IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247 The IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247V is a high-performance N-channel enhancement-mode power MOSFET designed for demanding power switching and amplification applications. It features a maximum drain-to-source voltage of 200V, a continuous drain current of 18A, and a low maximum drain-to-source on-resistance of 0.18Ω, providing excellent efficiency and low conduction losses. The TO-247 package offers superior thermal performance and is ideal for high-power circuits requiring efficient heat dissipation. Features: N-Channel enhancement-mode power MOSFET. Maximum drain-to-source voltage of 200V. Continuous drain current up to 18A. Low on-state resistance of 0.18Ω(Max). Fast switching performance. Dynamic dV/dt rated. Repetitive avalanche rated. Specifications: Parameter Value Part Number IRFP240 Transistor Type N-Channel Power MOSFET Technology Enhancement Mode MOSFET Package TO-247AC Mounting Type Through-Hole Drain-to-Source Voltage (VDS) 200V Continuous Drain Current (ID) 18A Pulsed Drain Current (IDM) 80A Drain-to-Source On-Resistance (RDS(on)) 0.18Ω(Max) Gate-to-Source Voltage (VGS) ±20V Gate Threshold Voltage (VGS(th)) 2V to 4V Power Dissipation (PD) 150W Total Gate Charge (Qg) 70nC(Max) Operating Junction Temperature -55°C to +150°C Package Style TO-247AC Pin Configuration: Applications: Switching power supplies. DC-DC converters. Motor drive circuits. Inverters. Uninterruptible power supplies (UPS). Battery charging systems. High-power audio amplifiers. Industrial automation equipment. Power control circuits. General-purpose high-power switching applications. Package Include: 1x IRFP240 N-Channel MOSFET 200V-18A-0.18Ω TO-247 Datasheet

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