P75N06 N-Channel MOSFET Transistor

Description

P75N06 N-Channel MOSFET Transistor The P75N06 N-Channel MOSFET Transistor is a robust power semiconductor device engineered for efficient switching and amplification in a variety of electronic circuits. As an N-channel enhancement-mode MOSFET, it operates by controlling the flow of current between the drain and source terminals through the application of a voltage to the gate. This transistor excels in applications requiring high current capability and low on-resistance, making it a versatile component in modern electronics. With a drain-source breakdown voltage of 60V, it can handle moderate voltage levels while supporting continuous drain currents up to 75A at 25°C case temperature, ensuring it performs reliably under demanding conditions. Features: High current capability for demanding power applications. Drain-source voltage rating of 60V for moderate voltage handling. Fast switching speed to minimize power losses. Specifications: Parameter Value Drain-Source Voltage (VDSS) 60 V Gate-Source Voltage (VGS) ±20 V Drain Current-continuous (ID) @ Tc=25°C 75 A Pulse Drain Current (ID(puls)) 300 A Total Dissipation (Ptot) @ Tc=25°C 150 W Max. Operating Junction Temperature (Tj) 150 °C Storage Temperature Range (Tstg) -55 °C ~ 150 °C Drain-Source Breakdown Voltage (V(BR)DSS) (min) 60 V Gate Threshold Voltage (VGS(th)) (min) 2.0 V Thermal Resistance, Junction to Case (Rth j-c) (max) 1.67 °C/W Drain-Source On-Resistance (RDS(on)) (max) 0.014 Ω Rise Time (tr) (max) 270 ns Turn-on Delay Time (td(on)) (max) 1300 ns Pin Configuration: Applications: Power Regulators and switching power supplies. High current, high speed switching circuits. Solenoid and relay drivers. Motor control and bridge circuits. General electronic equipment requiring efficient power management. Package Include: 1x P75N06 N-Channel MOSFET Transistor Datasheet: P75N06

From the supplier's page.