11N80 MOSFET Transistor 800V 11A
EGP 25
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11N80 MOSFET Transistor 800V 11A The 11N80 MOSFET Transistor 800V 11A TO-220F is a rugged N-Channel power MOSFET developed for high-voltage switching applications in demanding industrial and consumer power electronics systems. This device utilizes advanced CoolMOS™ C3 technology to achieve low conduction and switching losses, enabling superior efficiency and thermal performance in buck, boost, and high DC bulk voltage converters. Features: High Blocking Voltage: Rated for 800V Drain-Source voltage, providing ample margin for high-voltage mains applications. Low On-Resistance: Typical RDS(on) of approximately 0.45Ω ensures minimal conduction losses during operation. Low Gate Charge: Reduced gate charge (Qg) improves switching speed and reduces drive circuit power requirements. Avalanche Ruggedness: 100% avalanche tested to withstand high energy pulses during fault conditions. Specifications: Parameter Value Drain-Source Breakdown Voltage 800V Gate-Source Voltage ±20V Continuous Drain Current 11A Pulsed Drain Current 33A Power Dissipation 34W On-State Resistance (Max) 0.45Ω Gate Charge (Typical) 64nC Input Capacitance (Typical) 1600pF Output Capacitance (Typical) 65pF Gate Threshold Voltage (Max) 3.9V Operating Junction Temperature -55°C to 150°C Package TO-220F Pin Configuration: Applications: Switching regulators and power conversion circuits. High-voltage DC-DC converters and inverters. Industrial motor drive and control systems. AC-DC switch-mode power supplies (SMPS). Power factor correction (PFC) stages. High-efficiency power management applications. Datasheet: 11N80
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