
IRF740 N-Channel Power MOSFET TO-220 400V-0.55Ω-10A
EGP 17
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IRF740 N-Channel Power MOSFET TO-220 (400V-0.55Ω-10A) The IRF740 is an N-Channel Power MOSFET designed for high-performance power applications, featuring a drain-source voltage rating of 400V and a maximum current of 10A. It is well-suited for both switching and linear applications, providing robust and reliable performance. The device is packaged in a TO-220 package, which is widely used for power semiconductors, offering good thermal management and ease of integration into various systems. The IRF740 is optimized for power conversion, motor control, and general-purpose switching applications, making it a versatile choice for industrial and commercial use. Constructed with advanced MOSFET technology, the IRF740 features low on-state resistance (RDS(on)) of 0.55Ω at a gate-source voltage of 10V. This low resistance contributes to efficient power conduction with minimal power loss, especially under high-load conditions. Its fast switching capabilities ensure high efficiency in high-frequency applications, reducing the heat generated during operation. The MOSFET’s thermal performance is further optimized by the TO-220 package, which helps dissipate heat effectively, even under full load. The IRF740’s low gate charge and ease of drive requirements make it suitable for use in circuits that demand high-speed switching. Its rugged design offers reliable performance in harsh environments, and the device’s high avalanche energy rating ensures resilience during transient conditions. The IRF740 is a cost-effective solution for applications requiring high efficiency, fast switching speeds, and low power loss, such as power supplies, motor drives, and other power conversion systems. Features: 400V drain-source voltage rating. 10A continuous drain current. Low on-resistance (0.55Ω at VGS = 10V). Fast switching performance. Repetitive avalanche rated. Simple drive requirements. Ease of paralleling for increased current handling. Low gate charge (Qg = 63nC). High input impedance for stable control. Specifications: Property Description Product Type: N-Channel Power MOSFET Drain-Source Voltage (VDS): 400V Continuous Drain Current (ID): 10A RDS(on) at VGS = 10V: 0.55Ω Gate Charge (Qg): 63nC Gate-Source Threshold Voltage: 2.0V to 4.0V Pulsed Drain Current (IDM): 40A Power Dissipation (PD): 125W Package Type: TO-220AB Operating Junction Temp: -55°C to +150°C Thermal Resistance (RthJA): 62°C/W Pin Configuration: Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 10A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Applications: Switching high power devices. Inverter Circuits. DC-DC Converters. Control speed of motors. LED dimmers or flashers. High Speed switching applications. Package Contents: 1x IRF740 N-Channel Power MOSFET TO-220 400V-0.55Ω-10A Component Datasheet IRF740 Datasheet
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