2N3019 BJT Transistor NPN 80V 1A 100MHz Through Hole TO-39
EGP 35
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2N3019 BJT Transistor NPN 80V 1A 100MHz Through Hole TO-39 2N3019 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Features: NPN bipolar junction transistor. Suitable for signal amplification. Suitable for electronic switching. High-frequency operation capability. Through-hole mounting. Durable metal can package. Suitable for general-purpose electronic circuits. Low saturation voltage characteristics. Suitable for RF and communication circuits. Can be used in amplifier and switching designs. Specifications: Specification Value Package Type TO-39 Transistor Type NPN Maximum Collector Current (IC) 1A (1000mA) Maximum Collector-Emitter Voltage (VCEO) 80V Maximum Collector-Base Voltage (VCBO) 140V Maximum Emitter-Base Voltage (VEBO) 7V Maximum Collector Power Dissipation (PC) 5W Maximum Transition Frequency (fT) 100MHz DC Current Gain (hFE) 15–300 Operating Temperature Range -65°C to +200°C Storage Temperature Range -65°C to +200°C 2N3019 Pin Configuration: Pin No Pin Name 1 Emitter 2 Base 3 Collector Applications: Switching Loads under 800mA. Audio Amplification. Signal Amplification. RF & Radio Circuits. Darlington Pairs. Many Other General Purpose Applications. Package Includes: 1 × 2N3019 BJT Transistor NPN 80V 1A 100MHz Through Hole TO-39. Document: 2N3019 Datasheet
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