SS8550 Y2 Bipolar Transistors – BJT SMD 25V 300mW 120@100mA,1V 1.5A PNP SOT-23
EGP 1.25
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Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd. Mfr. Part # SS8550 Package SOT-23 Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. SS8550 Description 25V 300mW 120@100mA,1V 1.5A PNP SOT-23 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. SS8550 RoHS Collector Cut-Off Current (Icbo) 100nA Collector-Emitter Breakdown Voltage (Vceo) 25V Power Dissipation (Pd) 300mW DC Current Gain (hFE@Ic,Vce) 120@100mA,1V Collector Current (Ic) 1.5A Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@800mA,80mA Transistor Type PNP Operating Temperature +150℃@(Tj)
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