IRF1407 N-Channel Power MOSFET Transistor (130A-75V-7.8mΩ) TO-220
EGP 35
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IRF1407 N-Channel Power MOSFET Transistor (130A-75V-7.8mΩ) TO-220 IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:- Advanced process technology Ultra low on-resistance Dynamic dv/dt rating Fast switching Repetitive avalanche allowed up to Tjmax Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 75V Continuous Drain Current (Id) 130A Drain-Source Resistance (Rds On) 7.8mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 250 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 330W Related Documents IRF1407 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.
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