
MTP30P05 P-Channel Power MOSFET Transistor 50V 30A TO-220AB
EGP 26
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MTP30P05 P-Channel Power MOSFET Transistor 50V 30A TO-220AB The MTP30P05 MOSFET Transistor is a robust P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed to handle substantial current and moderate voltages in electronic switching and power management applications. Manufactured by ON Semiconductor / AMI Semiconductor, this device is typically supplied in a through-hole TO-220AB package, which facilitates easy mounting to heat sinks or printed circuit boards for improved thermal performance. Features: 30A continuous drain current and 50V drain-to-source voltage rating. Low on-resistance of 0.065Ω for reduced power losses. Fast switching times with turn-on delay of 15ns and turn-off delay of 28ns. Operating temperature range from -55°C to 175°C. Temperature-compensating PSPICE model for accurate simulations. Specifications: Parameter Symbol Test Conditions Min Typ Max Units Drain to Source Breakdown Voltage BVDSS ID=250μA,VGS=0V -50 – – V Gate Threshold Voltage VGS(TH) VGS=VDS,ID=250μA -2 – -4 V Zero Gate Voltage Drain Current IDSS VDS=Rated BVDSS,VGS=0V – – -1 μA VDS=0.8×Rated BVDSS,TC=150∘C – – -25 μA Gate to Source Leakage Current IGSS VGS=±20V – – ±100 nA Drain to Source On Resistance rDS(ON) ID=30A,VGS=−10V – – 0.065 Ω Turn-On Time t(ON) VDD=−25V,ID=15A,RL=1.67Ω,VGS=−10V,RG=6.25Ω – – 80 ns Turn-On Delay Time td(ON) ( fREF ) = 1.6MHz – – 23 ns Rise Time tr ( fREF ) = 1.6MHz – – 28 ns Turn-Off Delay Time td(OFF) ( fREF ) = 1.6MHz – – 18 ns Fall Time tf ( fREF ) = 1.6MHz – – 100 ns Total Gate Charge Qg(TOT) VGS=0 to −20V,VDD=−40V,ID=30A,RL=1.33Ω,IG(REF)=1.6mA V GS = 0 to − 20 V , V DD = − 40 V , I D = 30 A , R L = 1.33Ω , I G ( REF ) = 1.6 m A – 140 170 nC Gate Charge at -10V Qg(−10) ( fREF ) = 1.6MHz – 70 85 nC Threshold Gate Charge Qg(TH) ( fREF ) = 1.6MHz – 5.5 6.6 nC Input Capacitance CISS VDS=−25V,VGS=0V,(fREF)=1MHz – – 3200 pF Output Capacitance COSS ( fREF ) = 1MHz – – 800 pF Reverse Transfer Capacitance CRSS ( fREF ) = 1MHz – – 175 pF Thermal Resistance, Junction to Case RJJC – – 1.25 °C/W Thermal Resistance, Junction to Ambient RJJA TO-220, TO-263 – – 62 °C/W Pin Configuration: Applications: Switching regulators for efficient power conversion. Motor drivers in automation and robotics. Relay drivers for control systems. Switching converters in power supplies. Battery management systems for energy storage. Package Include: 1x MTP30P05 P-Channel MOSFET Transistor (TO-220). Datasheet: MTP30P05
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