
TIP140 NPN Power Darlington Transistor 60V 10A TO-247-3
EGP 25
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TIP140 NPN Power Darlington Transistor 60V 10A TO-247-3 The TIP140 is an NPN Darlington silicon power transistor designed for robust general-purpose amplification and low-frequency switching. Packaged in TO-247, the TIP140 integrates two transistors monolithically to deliver very high DC current gain with a single control input, making it suitable where large collector currents must be switched or amplified with modest base drive. Thanks to its Darlington pair construction and built-in base-emitter shunt resistor, the device simplifies circuit design by reducing external bias components and improving stability under load. The transistor is rated for substantial power handling when properly mounted to a heatsink, and typical on-state voltages reflect the Darlington topology’s higher saturation compared with single transistors. Mechanically available in TO-247 (the TO-247 package is the primary offering), the TIP140 targets power control roles such as motor drivers, power amplifiers, and switching regulators where a rugged, high-gain, high-current NPN device is required. Thermal and safe-operating-area graphs in the datasheet guide reliable use at elevated currents and voltages. Features: High DC current gain Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V. Collector-Emitter sustaining voltage VCEO(sus) = 60 V (TIP140). Monolithic Darlington construction with built-in base-emitter shunt resistor. 10 A continuous collector current capability (with appropriate mounting/heatsink). High total power dissipation rating (125 W @ TC = 25°C) when attached to a proper heatsink. Low junction-to-case thermal resistance RθJC = 1.0 °C/W. Pb-Free device (lead-free package available). Specifications: Parameter Value Transistor Type: NPN Darlington Package Type: TO-247 Collector-Emitter Voltage (V CEO ): 60 V Collector-Base Voltage (V CB ): 60 V Emitter-Base Voltage (V EB ): 5 V Continuous Collector Current (I C ): 10 A Peak Collector Current (I CM ): 15 A Continuous Base Current (I B ): 0.5 A Total Power Dissipation (P D ) at T c = 25°C: 125 W DC Current Gain (h FE ) (at I C = 5.0 A, V CE = 4.0 V): 1000 (Min) Collector-Emitter Saturation Voltage (V CE(sat) ) (at I C = 5.0 A, I B = 10 mA): 2.0 V (Max) Operating and Storage Junction Temperature Range (T J , T stg ): -65 to +150 °C Thermal Resistance, Junction-to-Case (R JC ) 1.0 °C/W Pinout: Applications: General-Purpose Amplifiers. Low-Speed Switching. Power Linear Applications. Motor Drivers. Audio Amplifiers. Package Content: 1x TIP140 NPN Power Darlington Transistor 60V 10A TO-247-3 Datasheet
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