
2N7002K 7002 N Channel MOSFET SMD 60V 340mA 0.35W 1.7Ω@4.5V SOT-23
EGP 1.50
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2N7002K 7002 N Channel MOSFET SMD 60V 340mA 0.35W 1.7Ω@4.5V SOT-23 The 2N7002K 7002 N Channel MOSFET is a compact N-channel enhancement-mode MOSFET designed for voltage-controlled switching applications. The device is rated for a drain-source voltage of 60V and a continuous drain current of 340mA, making it suitable for low-power switching and signal-control applications. The exact C17702881 listing specifies a maximum power dissipation of 350mW and an RDS(on) of 1.7Ω at a 4.5V gate-source voltage. Features: N-channel MOSFET. 60V drain-source voltage. 340mA continuous drain current. 350mW maximum power dissipation. 1.7Ω maximum RDS(on) at 4.5V gate-source voltage. Specifications. Parameter Value Component Type N-Channel MOSFET Model Number 7002-2N7002K Channel Type N-Channel Number of Channels 1 Drain-Source Voltage (VDS) 60V Continuous Drain Current (ID) 340mA Power Dissipation (PD) 350mW Gate Threshold Voltage (VGS(th)) 2.5V maximum Drain-Source On Resistance (RDS(on)) 1.7Ω @ 4.5V Input Capacitance (Ciss) 40pF Output Capacitance (Coss) 30pF Reverse Transfer Capacitance (Crss) 10pF Package SOT-23 Mounting Type Surface Mount Operating Temperature -55°C to +150°C ESD Protection 2kV HBM Foot print: Applications: Load switching for portable electronic devices. DC/DC converter circuits. Small-signal switching. Electronic switching circuits. Low-power control circuits. Logic-controlled switching applications. Battery-powered electronic equipment. Portable electronic devices. Compact PCB designs. General-purpose MOSFET switching applications. Package Include: 1x 2N7002K 7002 N Channel MOSFET SMD 60V 340mA 0.35W 1.7Ω@4.5V SOT-23 Datasheet
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