MTP6N60 N-Channel MOSFET Transistor 600V 6A 1.2Ω@3A,10V 125W TO-220

Description

MTP6N60 N-Channel MOSFET Transistor 600V 6A 1.2Ω@3A,10V 125W TO-220 The MTP6N60 is an N-Channel MOSFET transistor housed in a TO-220 package. It is specifically designed for use in high-efficiency switch-mode power supplies. This component features simple drive requirements and fast switching capabilities, making it a reliable choice for power management applications. ✅Features Drain Current: I D = 6A (at T C = 25°C) Drain-Source Voltage: V DSS = 600V (Min) Static Drain-Source On-Resistance: R DS(on) = 1.2 Ω (Max) Avalanche Energy Specified Fast Switching Simple Drive Requirements 📜📚Specifications Absolute Maximum Ratings (T a = 25°C) Symbol Parameter Value Unit V DSS Drain-Source Voltage 600 V V GS Gate-Source Voltage (Continuous) ±20 V I D Drain Current (Continuous) 6 A I DM Drain Current (Single Pulsed) 24 A P D Total Dissipation (at T c = 25°C) 125 W T j Max. Operating Junction Temperature 150 °C T stg Storage Temperature -55 ~ 150 °C Electrical Characteristics (T C = 25°C) Symbol Parameter Conditions Min Max Unit V (BR)DSS Drain-Source Breakdown Voltage V GS =0, I D =0.25mA 600 – V V GS(th) Gate Threshold Voltage V DS =V GS , I D =0.25mA 2 4 V R DS(on) Drain-Source On-Resistance V GS =10V, I D =3A – 1.2 Ω I GSS Gate-Body Leakage Current V GS =±20V, V DS =0 – ±100 nA I DSS Zero Gate Voltage Drain Current V DS =600V, V GS =0 – 1 μA V SD Forward On-Voltage I S =6A, V GS =0 – 1.8 V Thermal Characteristics Symbol Parameter Max Unit R th jc Thermal Resistance, Junction to Case 1 °C/W R th j-a Thermal Resistance, Junction to Ambient 62.5 °C/W ⚓Pin Configuration Pin 1: Gate Pin 2: Drain Pin 3: Source 💻Applications High-efficiency switch-mode power supply. 📖DataSheet MTP6N60

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