2SD2101 NPN BJT Transistor 200V 10A TO-220FM
EGP 12
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2SD2101 NPN BJT Transistor 200V 10A TO-220FM The 2SD2101 is a high-performance NPN power transistor designed for high-voltage and high-current applications. With a collector-emitter voltage of 200V and 10A collector current capability, it is suitable for switching regulators, power supplies, and motor control circuits. This transistor offers good switching characteristics and reliable operation in demanding environments. It is housed in a TO-220FM (fully molded insulated package), allowing simplified mounting without additional insulation while maintaining excellent thermal performance. Features NPN power transistor for high-voltage applications. High collector-emitter voltage (200V). High current capability up to 10A. Fast switching characteristics. Fully insulated TO-220FM package. Suitable for power control and switching circuits. Specifications Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 200 V Collector to emitter voltage V CEO 200 V Emitter to base voltage V EBO 7 V Collector current I C 10 A Collector peak current I C(peak) 15 A Collector power dissipation P C 2 W Junction temperature T j 150 °C Storage temperature T stg -55 to +150 °C Applications Switching power supplies (SMPS). Motor drivers and control circuits. High-voltage switching applications. Power amplifiers. Industrial electronics. Documents Datasheet 2SD2101
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