IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220

Description

IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220 The IRF5210 is a P-Channel Power MOSFET born from International Rectifier’s fifth-generation HEXFET technology. This advanced manufacturing process is the core of its performance, enabling the integration of a powerful transistor into a compact silicon area. The focus of this technology is to fundamentally reduce electrical resistance when the device is switched on, which is a primary source of power loss and heat generation in such components. Housed in the ubiquitous TO-220 package, the device is built for robustness and practical utility. This package is industry-standard for good reason: it offers an effective compromise between cost, physical size, and thermal performance. The design facilitates efficient transfer of heat from the silicon junction to a heatsink, which is crucial for maintaining reliability under continuous high-power operation. The transistor is also described as “fully avalanche rated,” indicating a rugged design that can withstand brief periods of high-voltage stress beyond its normal breakdown rating without failure. In application, this combination of technology and design translates into a component known for efficient power control. Its fast switching capability allows it to transition rapidly between on and off states, minimizing transition losses a key factor in modern, efficient power circuits. The overall result is a power switch that provides designers with a dependable and effective means of controlling significant current levels, contributing to the stability and efficiency of the broader electronic system it serves. Features: Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Fifth Generation HEXFET Technology. Rugged Device Design. TO-220 Package (Low Thermal Resistance & Cost). Specifications: Parameter Specification Condition / Note Drain-to-Source Voltage (Vdss): -100 V Continuous Drain Current (Id): -40 A @ Tc = 25°C On-Resistance (Rds(on)): 0.06 Ω @ Vgs = -10V, Id = -24A Gate Threshold Voltage (Vgs(th)): -2.0 V (min) Total Gate Charge (Qg): 180 nC (typ) Avalanche Energy (Eas): 780 mJ (single pulse) Power Dissipation (Pd): 200 W @ Tc = 25°C Junction Temperature (Tj): -55 to +175 °C Thermal Resistance (RthJC): 0.75 °C/W (max) Junction-to-Case Pinout: Applications: Power Switching Circuits. Motor Control Drives. DC-DC Converters. Switching Regulators. UPS Systems. Industrial Controls. Package Contents: 1x IRF5210 P-Channel Power MOSFET Transistor 100V 40A 60mΩ TO-220 Datasheet

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