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2SK791 N-Channel MOSFET Transistor 850V 3A TO-220

2SK791 N-Channel MOSFET Transistor 850V 3A TO-220

In stockTransistors & MOSFETsVerified 2 weeks ago

EGP 25

Makers Electronics

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Description

2SK791 N-Channel MOSFET Transistor TO-220 (850V, 3A) The 2SK791 is a high-performance N-Channel MOSFET transistor designed for high-voltage, high-speed switching applications. This device is capable of handling a drain-source voltage (VDSS) of 850V, making it suitable for power systems that require efficient voltage control and switching. This MOSFET features a continuous drain current (ID) of 3A at a case temperature of 25°C. The transistor is specifically designed to handle fast switching operations, making it ideal for use in switching regulators, converters, and other power electronics. Its robust performance characteristics also include a low gate threshold voltage, which enables effective switching, and a low on-state resistance, ensuring minimal power loss during operation. This makes the 2SK791 particularly useful in applications such as solenoid and relay drivers, where high switching speeds and power efficiency are required. Features: High drain-source voltage (VDSS) of 850V. Capable of handling 3A of continuous drain current at 25°C. Fast switching speed. Low on-state resistance (RDS(on)). Designed for power switching applications like converters and relay drivers. Specifications: Parameter Value Drain-Source Voltage (VDSS): 850V Gate-Source Voltage (VGS): ±20V Drain Current (ID): 3A Total Power Dissipation (Ptot): 100W Maximum Junction Temperature (Tj): 150°C Storage Temperature Range (Tstg): -55°C to 150°C Thermal Resistance (Rth j-c): 1.0°C/W Thermal Resistance (Rth j-a): 62.5°C/W Applications: Switching Power Supplies. Motor Control Circuits. Amplifiers and Audio Systems. Power Electronics. Lighting Control. Package Contents: 1x 2SK791 N-Channel MOSFET Transistor 850V 3A TO-220 2SK791 Datasheet

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