BUX98C Bipolar Transistor BJT NPN High Volt Power TO-3
EGP 165
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BUX98C Bipolar Transistor BJT NPN High Volt Power TO-3 Made in Malaysia The BUX98C is a robust Silicon Multi-Epitaxial Mesa NPN transistor housed in a hermetically sealed JEDEC TO-3 metal case. Engineered for high-power applications, this transistor excels in demanding industrial environments. Its design is optimized for use in switching and linear applications, particularly those operating from single and three-phase mains. Features: High Voltage Capability. High Current Capability . Fast Switching Speed . High Power Dissipation. Robust TO-3 Package. Specifications: Parameter Value Unit Transistor Polarity: NPN – Collector-Emitter Voltage (VCEO): 700 V Collector-Emitter Voltage (VCES): 1200 V Collector-Base Voltage (VCBO): 1200 V Emitter-Base Voltage (VEBO): 7 V Continuous Collector Current (IC): 30 A Peak Collector Current (ICM): 60 A Total Power Dissipation (Ptot) @ Tc=25°C: 250 W Max. Operating Junction Temperature (Tj): 200 °C Package Type: TO-3 – Applications: High-Frequency and High-Efficiency Converters. Linear and Switching Industrial Equipment. Power Amplifiers. Motor Control Circuits. Package Contents: 1x BUX98C Bipolar Transistor BJT NPN High Volt Power TO-3 Datasheet
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