IRF9530 P-Channel Power MOSFET Transistor IC (TO-220) 100V 14A 0.2Ω
EGP 25
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IRF9530 P-Channel Power MOSFET Transistor IC (TO-220) 100V 14A 0.2Ω IRF9530 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Dynamic dV/dt rating • 100% avalanche rated • Fast switching • Ease of paralleling • New high voltage benchmark • P-Channel • Compliant to RoHS directive 2002/95/EC Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity P-Channel Drain-Source Breakdown Voltage (Vds) -100V Continuous Drain Current (Id) -14A Drain-Source Resistance (Rds On) 0.20Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 58 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 79W Related Documents IRF9530 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.
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