BC856B
BC856B 3B Bipolar Transistors – BJT SMD 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236)
EGP 2
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Manufacturer FOSAN Mfr. Part # BC856B Package SOT-23(TO-236) Datasheet FOSAN BC856B Description 65V 225mW 290@2mA,5V 100mA PNP SOT-23(TO-236) Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet FOSAN BC856B RoHS Collector Cut-Off Current (Icbo) 15nA Collector-Emitter Breakdown Voltage (Vceo) 65V Power Dissipation (Pd) 225mW DC Current Gain (hFE@Ic, Vce) 290@2mA,5V Collector Current (Ic) 100mA Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@10mA,500uA Transistor Type PNP Operating Temperature -55℃~+150℃@(Tj)
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