MMBT2222A
MMBT2222A 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors – BJT
EGP 1.25
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Manufacturer CBI Mfr. Part # MMBT2222A 1P Package SOT-23 Datasheet CBI MMBT2222A 1P Description 40V 250mW 100@150mA,10V 600mA NPN SOT-23 Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet CBI MMBT2222A 1P RoHS Collector Cut-Off Current (Icbo) 10nA Collector-Emitter Breakdown Voltage (Vceo) 40V Power Dissipation (Pd) 250mW DC Current Gain (hFE@Ic,Vce) 100@150mA,10V Collector Current (Ic) 600mA Transition Frequency (fT) 300MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@150mA,15mA Transistor Type NPN Operating Temperature +150℃@(Tj)
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