FQP40N03 N-Channel MOSFET Transistor

Description

FQP40N03 N-Channel MOSFET Transistor he FQP40N03 N-Channel MOSFET Transistor, a versatile power component optimized for low-voltage, high-speed switching in electronic circuits. Leveraging enhancement mode technology, this device offers low on-state resistance and minimal gate charge, ensuring efficient operation and reduced heat dissipation in compact designs. Ideal for engineers and hobbyists alike, it provides reliable performance in power management tasks where speed and efficiency are critical, helping to lower system costs and improve energy usage. Features: Low static drain-to-source on-resistance for efficient power handling. Low gate charge for faster switching and reduced drive power. High forward transconductance for improved amplification. Fully characterized for inductive switching and peak current capabilities. Wide gate threshold voltage range for flexible driving. Specifications: Parameter Value Drain-Source Breakdown Voltage (VDSS) 30V Gate-Source Voltage (VGS) ±20V Continuous Drain Current (ID) 40A Pulsed Drain Current (IDM) 170A Static Drain-Source On-Resistance (RDS(on)) 17mΩ Gate Threshold Voltage (VGS(th)) 1V to 3V Input Capacitance (Ciss) 800pF Total Gate Charge (Qg) 17nC Turn-On Delay Time (td(on)) 7.2ns Rise Time (tr) 60ns Turn-Off Delay Time (td(off)) 22.5ns Fall Time (tf) 10ns Operating Temperature Range (TJ) -55°C to 150°C Pin Configuration: Applications: Fast switching circuits in power supplies. Motor control and drive systems. DC-DC converters and voltage regulators. Load switches in battery-powered devices. Inductive load switching in automotive electronics. Package Include: 1x FQP40N03 N-Channel MOSFET Transistor. Datasheet: 40N03

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