2SK727 N-Channel MOSFET Transistor 900V 5A TO-3PFM

Description

2SK727 N-Channel MOSFET Transistor 900V 5A TO-3PFM The 2SK727 is a high-voltage, N-channel silicon power MOSFET . Engineered for high-speed switching and exceptional stability, this power transistor handles high voltages up to 900V and a continuous drain current of 5A without risks of secondary breakdown . It boasts an avalanche-proof design, low driving power requirements, and excellent thermal performance, making it a reliable choice for robust industrial power systems . Features High-Voltage Capability High-Speed Switching Low On-State Resistance No Secondary Breakdown Avalanche-Proof Low Driving Power Specifications Absolute Maximum Ratings ( T c = 25°C) Items Symbols Ratings Units Drain-source voltage V DSS 900 V Continuous drain current I D 5 A Pulsed drain current I D(puls) 20 A Continuous reverse drain current I DR 5 A Gate-source peak voltage V GSS ±20 V Max. power dissipation P D 125 W Operating channel temperature T ch 150 °C Storage temperature range T stg -55 ~ +150 °C Electrical Characteristics ( T c = 25°C) Items Symbols Test Conditions Min. Typ. Max. Units Drain-source breakdown voltage V (BR)DSS I D =1mA, V GS =0V 900 – – V Gate threshold voltage V GS(th) I D =10mA, V DS = V GS 2.1 3.0 4.0 V Zero gate voltage drain current I DSS V DS =900V, V GS =0V, T ch =25°C – 10 500 μA Gate-source leakage current I GSS V GS =±20V, V DS =0V – 10 100 nA Drain-source on-state resistance R DS(on) I D =2.5A, V GS =10V – 2.0 2.5 Ω Forward transconductance g fs I D =2.5A, V DS =25V 3.0 6.0 – S Input capacitance C iss V DS =25V, V GS =0V, f=1MHz – 1500 2400 pF Output capacitance C oss – 150 240 pF Reverse transfer capacitance C rss – 50 80 pF Turn-on time ( t on = t d(on) + t r ) t on V CC =30V, I D =2.4A, R G =50Ω, V GS =10V – 110 170 ns Turn-off time ( t off = t d(off) + t f ) t off – 300 450 ns Diode forward on-voltage V SD I F =2 × I DR , V GS =0V, T ch =25°C – 1.0 1.5 V Reverse recovery time t rr I F = I DR , di/dt=100A/μs, T ch =25°C – 900 – ns Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units Thermal Resistance R th(ch-a) Channel to air – – 35 °C/W Thermal Resistance R th(ch-c) Channel to case – – 1.0 °C/W Applications Switching Regulators Uninterruptible Power Supplies (UPS) DC-DC Converters General-Purpose Power Amplifiers Package Content 1 x 2SK727 N-Channel MOSFET Transistor 900V 5A TO-3PFM DataSheet 2SK727

From the supplier's page.