TOSHIBA K2038 N-Channel MOSFET Transistor 800V 5A 125W TO-3PN

Description

TOSHIBA K2038 N-Channel MOSFET Transistor 800V 5A 125W TO-3PN The K2038 N-Channel MOSFET Transistor 800V 5A 125W TO-3PN is a high-voltage power MOSFET supplied in a robust TO-3PN metal package, engineered for high-voltage switching and power-conversion applications where dependable avalanche tolerance and effective thermal dissipation are required. The device features an 800V drain-source rating, a 5A continuous drain capability, substantial pulse and power handling, and gate robustness suitable for industrial and power-supply environments. Features 800V drain-source breakdown rating for high-voltage applications. 5A continuous drain current rating for sustained operation. 125W total power dissipation at case temperature for heavy-duty switching. Low on-resistance approximately 2.2Ω to minimise conduction losses. Rugged TO-3PN metal package for excellent thermal transfer and heatsinking. Gate-source withstand voltage ±30V for robust gate-drive margins. High single-pulse avalanche capability for inductive-load tolerance. Fast switching characteristics suitable for DC-DC converters and inverter front-ends. Specifications Absolute Maximum Ratings (T a = 25°C) Characteristic Symbol Rating Unit Drain-Source Voltage V DSS 800 V Drain-Gate Voltage (R GS =20kΩ) V DGR 800 V Gate-Source Voltage V GSS ±30 V Drain Current (DC) I D 5 A Drain Current (Pulse) I DP 15 A Drain Power Dissipation (T C =25°C) P D 125 W Channel Temperature T ch 150 °C Storage Temperature Range T stg -55 to +150 °C Applications High-voltage DC-DC converters and switch-mode power supplies. Inverter front-ends, crowbar/protection and surge-resistant switching. Motor-drive pre-stages and power amplifiers requiring high VDS. Industrial power electronics and offline switching stages. Rugged, high-voltage test and measurement equipment. Package Contents 1x TOSHIBA K2038 N-Channel MOSFET Transistor 800V 5A 125W TO-3PN. Documents Datasheet 2SK2038

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