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FGL60N120AND IGBT Power Transistor 1200V 100A TO-264-3
FGL60N120AND

FGL60N120AND IGBT Power Transistor 1200V 100A TO-264-3

In stockTransistors & MOSFETsVerified 2 weeks ago

EGP 145

Makers Electronics

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Description

FGL60N120AND IGBT Power Transistor 1200V 100A TO-264-3 The FGL60N120AND is a robust discrete IGBT designed for demanding power-switching roles. It features a TO‑264‑3 thermally efficient package with a pipe-style collector lead optimized for heat dissipation. Rated for 1200 V blocking voltage and 60 A average collector current, it is engineered to handle high energy pulses with reliability. The device’s sturdy construction and metalized mounting surface enable efficient heat sinking and withstand harsh industrial environments. Built on Fairchild’s NPT trench-gate technology, this transistor maintains a low saturation voltage, allowing efficient conduction and reducing thermal losses under high-current conditions. It houses a high-quality fast-recovery diode in the same package, ensuring smooth commutation without needing external diodes. The structure’s ruggedness and thermal headroom make it suitable for continuous operation in systems requiring rapid switching cycles, such as motor inverters or welding power supplies Despite its high-power capability, it remains manageable in size. Its three-pin configuration (Gate, Collector, Emitter) offers straightforward PCB or heatsink integration. Marked with clear polarity and equipped with mounting holes, the part simplifies alignment and fixture during assembly. Its thermal pad and reinforced body support secure fastening and ensure long-term mechanical and electrical stability within power converters and industrial switchgear assemblies . Features: Fast switching capability. Low collector-emitter saturation voltage. Positive temperature coefficient. Integrated soft and fast recovery anti-parallel diode. RoHS compliant. Specifications: Product Attribute Attribute Value Product Category: IGBTs Technology: Si Package/Case: TO-264-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2kV Collector-Emitter Saturation Voltage: 2.0V Maximum Gate Emitter Voltage: 20V Continuous Collector Current at 25 C: 100A Pd – Power Dissipation: 367W Minimum Operating Temperature: – 55C Maximum Operating Temperature: + 150C Series: FGL60N120AND Continuous Collector Current Ic Max: 100A Pinout: Pin Function 1 Gate 2 Collector 3 Emitter Applications: Uninterruptible power supplies (UPS). Welding converters and inverters. High-frequency power converters. Industrial motor drives. Renewable energy inverters. Package Contents: 1x FGL60N120AND IGBT Power Transistor 1200V 100A TO-264-3. Documents: FGL60N120AND Datasheet

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FGL60N120AND IGBT Power Transistor 1200V 100A TO-264-3 · makhzan