UM6264B-10L 8K X 8 64k STANDARD SRAM 100ns IC DIP-28 Wide

Description

UM6264B-10L 8K X 8 64k STANDARD SRAM 100ns IC DIP-28 Wide The UM6264B-10L is presented as a compact static random-access memory device intended to supply dependable temporary storage inside digital systems. As a static RAM element, it provides straightforward read/write access without refresh cycles and is intended to simplify system timing and memory management for embedded designs. The device is described for use where predictable, low-latency memory operations are needed: it can be connected directly to system buses and processors and is designed for straightforward integration into common board-level memory architectures. Control inputs allow selective enabling and disabling to coordinate with shared bus environments. Built on a mature CMOS process, the UM6264B-10L emphasizes reliable, stable operation in embedded contexts and is offered in standard package styles to fit both prototype and production workflows. The description in the PDF positions the part as a general-purpose SRAM building block for digital designs requiring simple, deterministic volatile storage. Features: Directly TTL-compatible inputs and outputs. Full static operation (no clock or refresh required). Common I/O using three-state outputs for shared-bus systems. Output enable plus two chip-enable inputs for flexible enable/power-down control. Specifications: Specification UM6264B-10L Value Memory organization: 8,192 words × 8 bits Total memory capacity: 65,536 bits (64K SRAM) Access time (tACC): 100 ns (maximum) Chip enable access time (tCE): 100 ns (maximum) Output enable access time (tOE): 50 ns (maximum) Write cycle time (tWC): 100 ns (maximum) Supply voltage (VCC): 5 V ±10% Input high voltage (VIH): 2.2 V minimum Input low voltage (VIL): 0.8 V maximum Output high voltage (VOH): 2.4 V minimum Output low voltage (VOL): 0.4 V maximum Operating current (ICC): 45 mA maximum Standby current (ISB): 100 µA maximum Data retention voltage: 2.0 V minimum Operating temperature range: 0°C to +70°C Storage temperature range: −55°C to +150°C Package type: 28-pin DIP Wide Technology: CMOS static RAM I/O type: TTL compatible, three-state Pin Configuration: Applications: System scratchpad / working memory. Cache or buffer memory in embedded controllers. Firmware development, debugging prototyping (breadboard / DIP usage). Small-scale data logging and instrumentation. Package contents: 1x UM6264B-10L 8K X 8 64k STANDARD SRAM 100ns IC DIP-28 Wide Datasheet

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