Tip127 PNP Darlington Bipolar Power Transistor 100V 5A TO-220
EGP 12
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Tip127 PNP Darlington Bipolar Power Transistor 100V 5A TO-220 The TIP127 is a silicon PNP power transistor manufactured in planar technology with a “base island” layout and a monolithic Darlington configuration. This device offers exceptional high gain performance coupled with very low saturation voltage. It is designed for low voltage complementary power applications and acts as the PNP complement to the TIP122 NPN transistor ✅Features Low voltage power Darlington transistor Low collector-emitter saturation voltage Monolithic Darlington configuration Planar technology with “base island” layout Exceptional high gain performance 📜📚Specifications Parameter Symbol Value Unit Collector-Base Voltage (I E = 0) V CBO -100 V Collector-Emitter Voltage (I B = 0) V CEO -100 V Emitter-Base Voltage (I C = 0) V EBO -5 V Collector Current I C -5 A Collector Peak Current I CM -8 A Base Current I B -0.12 A Total Power Dissipation (T C ≤ 25°C) P TOT 65 W Total Power Dissipation (T A ≤ 25°C) P TOT 2 W DC Current Gain (I C = 3A, V CE = 3V) h FE 1000 (min) – Storage Temperature Range T stg -65 to 150 °C Max. Operating Junction Temperature T J 150 °C 💻Applications General purpose linear and switching 📃📖DataSheet tip12x
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