IRF5305 P-Channel Power MOSFET 55V 31A TO-220

Description

IRF5305 P-Channel Power MOSFET 55V 31A TO-220 The IRF5305 is a robust P‑channel HEXFET® MOSFET in a TO‑220AB package, designed for high‑power applications requiring efficient high‑side switching. It delivers a continuous drain current of –31 A (–22 A at 100 °C) and withstands up to 55 V drain‑to‑source voltage. With a low on‑resistance of 0.06 Ω at V GS =–10 V and an impressive 110 W power dissipation rating, the IRF5305 ensures minimal conduction losses and reliable operation up to a 175 °C junction temperature. Features Fifth‑generation HEXFET® technology for extremely low R DS(on) . P‑channel configuration ideal for high‑side power switching. 55 V drain‑to‑source breakdown voltage. Continuous drain current: –31 A @25 °C (–22 A @100 °C). Low R DS(on) : 0.06 Ω @ V GS =–10 V, I D =–16 A. High pulse‑current capability: –110 A pulsed. Wide gate‑to‑source rating: ±20 V. Single‑pulse avalanche energy: 280 mJ. Fast switching with typical turn‑on delay of 14 ns and turn‑off delay of 39 ns. Specifications Maximum Ratings at T C = 25 °C Parameter Symbol Value Unit Drain–Source Voltage V DSS 55 V Continuous Drain Current I D –31 A Pulsed Drain Current I DM –110 A Gate–Source Voltage V GS ±20 V Power Dissipation P D 110 W Operating Junction Temperature T J –55 to +175 °C Storage Temperature T stg –55 to +175 °C Applications High‑side load switching in automotive and industrial systems. DC‑DC converters and reverse‑battery protection. Power management in telecommunications and server supplies. Motor control, battery protection, and hot‑swap circuits. Package Contents 1× IRF5305 P‑Channel Power MOSFET in TO‑220AB package. Datasheet

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