2SK2361 N-Channel Power MOSFET 450V 10A TO-3P

Description

2SK2361 N-Channel Power MOSFET 450V 10A TO-3P The 2SK2361 is an N-Channel MOS Field Effect Transistor (Power MOS FET) manufactured by NEC Corporation, designed for high-voltage switching applications and rated for industrial use. The device blocks up to 450 V drain-to-source (VDSS) and handles a DC drain current of ±10 A (±40 A pulsed), with a total power dissipation of 100 W at a case temperature of 25 °C (3.0 W at 25 °C ambient). It combines low on-resistance — RDS(on) of only 0.9 Ω maximum at VGS = 10 V, ID = 5.0 A — with low typical input capacitance (Ciss = 1050 pF) for fast, efficient switching, and high avalanche capability ratings (single avalanche current IAS = 10 A, single avalanche energy EAS = 142 mJ). A diode connected between gate and source serves as protection against ESD. The transistor is supplied in the MP-88 package, in which the metal fin (pin 4) is connected to the drain. The same datasheet also covers the companion device 2SK2362 (VDSS = 500 V, RDS(on) = 1.0 Ω max.). Features N-Channel MOS field effect transistor for high-voltage switching (industrial use) Low on-resistance: RDS(on) = 0.9 Ω max. (VGS = 10 V, ID = 5.0 A) Low input capacitance: Ciss = 1050 pF typ. High avalanche capability ratings (IAS = 10 A, EAS = 142 mJ) High voltage blocking: VDSS = 450 V; VGSS = ±30 V High current capability: ID = ±10 A (DC), ±40 A (pulse) Power dissipation: 100 W (TC = 25 °C) / 3.0 W (TA = 25 °C) Fast switching: td(on) = 15 ns, tr = 24 ns, td(off) = 50 ns, tf = 14 ns (typ.) Low total gate charge: QG = 26 nC (typ.) Built-in gate–source diode for ESD protection Specifications Absolute Maximum Ratings (T A = 25°C) Parameter Symbol Rating Unit Conditions / Notes Drain to Source Voltage V DSS 450 V 2SK2361 (companion 2SK2362: 500 V) Gate to Source Voltage V GSS ±30 V Drain Current (DC) I D (DC) ±10 A Drain Current (Pulse) I D (pulse) ±40 A PW ≤ 10 µs, Duty Cycle ≤ 1 % Total Power Dissipation P T1 100 W T C = 25 °C Total Power Dissipation P T2 3.0 W T A = 25 °C Channel Temperature T ch 150 °C Storage Temperature T stg -55 to +150 °C Single Avalanche Current I AS 10 A Starting T ch = 25 °C, R G = 25 Ω, V GS = 20 V → 0 Single Avalanche Energy E AS 142 mJ Starting T ch = 25 °C, R G = 25 Ω, V GS = 20 V → 0 Electrical Characteristics (T A = 25°C) Characteristic Symbol Min. Typ. Max. Unit Test Conditions Drain to Source On-Resistance R DS(on) – 0.7 0.9 Ω V GS = 10 V, I D = 5.0 A Gate to Source Cutoff Voltage V GS(off) 2.5 – 3.5 V V DS = 10 V, I D = 1 mA Forward Transfer Admittance |y fs | 3.0 – – S V DS = 10 V, I D = 5.0 A Drain Leakage Current I DSS – – 100 µA V DS = V DSS , V GS = 0 Gate to Source Leakage Current I GSS – – ±100 nA V GS = ±30 V, V DS = 0 Input Capacitance C iss – 1050 – pF V DS = 10 V, V GS = 0, f = 1 MHz Output Capacitance C oss – 200 – pF V DS = 10 V, V GS = 0, f = 1 MHz Reverse Transfer Capacitance C rss – 26 – pF V DS = 10 V, V GS = 0, f = 1 MHz Turn-On Delay Time t d(on) – 15 – ns I D = 5.0 A, V GS = 10 V, V DD = 150 V, R G = 10 Ω, R L = 30 Ω Rise Time t r – 24 – ns I D = 5.0 A, V GS = 10 V, V DD = 150 V, R G = 10 Ω, R L = 30 Ω Turn-Off Delay Time t d(off) – 50 – ns I D = 5.0 A, V GS = 10 V, V DD = 150 V, R G = 10 Ω, R L = 30 Ω Fall Time t f – 14 – ns I D = 5.0 A, V GS = 10 V, V DD = 150 V, R G = 10 Ω, R L = 30 Ω Total Gate Charge Q G – 26 – nC I D = 10 A, V DD = 400 V, V GS = 10 V Gate to Source Charge Q GS – 6.1 – nC I D = 10 A, V DD = 400 V, V GS = 10 V Gate to Drain Charge Q GD – 12 – nC I D = 10 A, V DD = 400 V, V GS = 10 V Body Diode Forward Voltage V F (S-D) – – 1.0 V I F = 10 A, V GS = 0 Reverse Recovery Time t rr – 350 – ns I F = 10 A, V GS = 0, di/dt = 50 A/µs Reverse Recovery Charge Q rr – 2.0 – µC I F = 10 A, V GS = 0, di/dt = 50 A/µs Applications High-voltage switching circuits Switching power supplies Industrial equipment (machine tools, industrial robots) Computers, office equipment, communications equipment Test and measurement equipment Audio and visual equipment, home electronic appliances Package Content 1 x 2SK2361 N-Channel Power MOSFET 450V 10A TO-3P DataSheet 2SK2361

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