2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92

Description

2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92 The 2N7000 is an N-channel enhancement mode field effect transistor produced using high cell density DMOS technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This device is a voltage-controlled small signal switch and is particularly suited for low-voltage, low-current applications. The datasheet specifies the 2N7000 for a maximum continuous drain current of 200mA and a maximum pulsed drain current of 500mA. It is supplied in a TO-92 package. Features N-channel enhancement mode field effect transistor High-density cell design for low RDS(ON) Voltage-controlled small signal switch Rugged and reliable construction High saturation current capability Fast switching performance 60V drain-source voltage rating 200mA continuous drain current 500mA pulsed drain current 400mW maximum power dissipation TO-92 package Specifications Specification Value Part Number 2N7000 Device Type N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage (VDSS) 60 V Drain-Gate Voltage (VDGR) 60 V Gate-Source Voltage, Continuous (VGSS) ±20 V Gate-Source Voltage, Non-Repetitive (tp < 50 µs) ±40 V Maximum Drain Current, Continuous (ID) 200 mA Maximum Drain Current, Pulsed (ID) 500 mA Maximum Power Dissipation (PD) 400 mW Power Derating Above 25°C 3.2 mW/°C Operating and Storage Temperature (TJ, TSTG) -55°C to +150°C Maximum Lead Temperature for Soldering 300°C for 10 seconds Thermal Resistance, Junction-to-Ambient (RθJA) 312.5°C/W Drain-Source Breakdown Voltage (BVDSS) 60 V min. Zero Gate Voltage Drain Current (IDSS) 1 µA max. at VDS = 48 V, VGS = 0 V IDSS at TJ = 125°C 1 mA max. Gate-Body Leakage, Forward (IGSSF) 10 nA max. Gate-Body Leakage, Reverse (IGSSR) -10 nA max. Gate Threshold Voltage (VGS(th)) 0.8 V min., 2.1 V typ., 3 V max. Static Drain-Source On-Resistance (RDS(ON)) 1.2 Ω typ., 5 Ω max. at VGS = 10 V, ID = 500 mA RDS(ON) at TJ = 125°C 1.9 Ω typ., 9 Ω max. RDS(ON) at VGS = 4.5 V, ID = 75 mA 1.8 Ω typ., 5.3 Ω max. Drain-Source On-Voltage (VDS(ON)) 0.6 V typ., 2.5 V max. at VGS = 10 V, ID = 500 mA VDS(ON) at VGS = 4.5 V, ID = 75 mA 0.14 V typ., 0.4 V max. On-State Drain Current (ID(ON)) 75 mA min., 600 mA typ. at VGS = 4.5 V, VDS = 10 V Forward Transconductance (gFS) 100 mS min., 320 mS typ. Input Capacitance (Ciss) 20 pF typ., 50 pF max. Output Capacitance (Coss) 11 pF typ., 25 pF max. Reverse Transfer Capacitance (Crss) 4 pF typ., 5 pF max. Turn-On Time (ton) 10 ns Turn-Off Time (toff) 10 ns Package TO-92 Applications The 2N7000 is particularly suited for low-voltage, low-current applications such as: Small servo motor control Power MOSFET gate drivers General switching applications Voltage-controlled small signal switching Low-current power control circuits Package Content 1 x 2N7000 N-Channel Enhancement-Mode MOSFET 60V 200mA TO-92 DataSheet 2N7000

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