IRFPC50 Power MOSFET Transistor 600V 11A TO-247

Description

IRFPC50 Power MOSFET Transistor 600V 11A TO-247 The IRFPC50 is a third-generation N-channel power MOSFET designed to provide an excellent combination of high voltage capability, fast switching performance, low on-state resistance, and rugged reliability. With a drain-source voltage rating of 600V and a continuous drain current capability of 11A, this device is ideal for medium- to high-power switching applications. The MOSFET utilizes advanced cell design technology to achieve efficient operation while minimizing switching losses. Packaged in a TO-247 enclosure, the IRFPC50 offers excellent thermal performance and easy mounting for high-power applications. The device features avalanche energy capability, dynamic dV/dt ruggedness, and simple gate drive requirements, making it suitable for power conversion systems, industrial automation equipment, UPS systems, motor controllers, induction heating circuits, and high-voltage DC-DC converters. Features: N-channel enhancement-mode MOSFET. High-voltage power switching capability. Fast switching performance. Low gate drive power requirements. Avalanche rated device. Dynamic dV/dt ruggedness. Low on-state resistance. High current handling capability. Excellent thermal characteristics. Easy paralleling capability. Rugged device construction. Integral body diode. Suitable for high-frequency switching. Isolated mounting hole package design. Designed for industrial and commercial applications. Lead-free versions available. Specifications: Parameter Value Part Number IRFPC50 MOSFET Type N-Channel Drain-Source Voltage (VDS) 600V Gate-Source Voltage (VGS) ±20V Continuous Drain Current (ID) @ 25°C 11A Continuous Drain Current (ID) @ 100°C 7A Pulsed Drain Current (IDM) 44A Drain-Source On Resistance (RDS(on)) 0.60Ω Max Maximum Power Dissipation 180W Gate Threshold Voltage (VGS(th)) 2V to 4V Total Gate Charge (Qg) 140nC Max Input Capacitance (Ciss) 2700pF Output Capacitance (Coss) 300pF Reverse Transfer Capacitance (Crss) 61pF Forward Transconductance (gfs) 5.7S Minimum Avalanche Energy (EAS) 920mJ Operating Junction Temperature -55°C to +150°C Package Type TO-247 Pinout: Pin Function 1 Gate 2 Drain 3 Source Applications: Switch-mode power supplies (SMPS). AC-DC power converters. DC-DC converters. Motor drive circuits. Industrial inverters. UPS systems. Battery charging systems. High-voltage switching circuits. Induction heating equipment. Solar power inverters. Power factor correction circuits. Electronic ballast systems. Industrial automation equipment. High-frequency power control systems. Package Included: 1x IRFPC50 Power MOSFET Transistor 600V 11A TO-247. Documents: IRFPC50 Datasheet.

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