FQPF11N60
FQPF11N60 N-Channel MOSFET Tramsistor
EGP 30
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Specifications Type Designator: FQPF11N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 36 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V Maximum Drain Current |Id|: 11 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 40 nC Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm Package: TO220F Technical Datasheet
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