FQPF7N80C N-Channel MOSFET Transistor To-220F
EGP 20
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FQPF7N80C N-Channel MOSFET Transistor To-220F The FQPF7N80C N-Channel MOSFET Transistor TO-220F is a robust enhancement-mode power MOSFET designed for high-voltage, high-efficiency switching applications. this device integrates proprietary DMOS technology to deliver excellent on-state resistance performance, high avalanche energy tolerance, and reliable switching characteristics suited for demanding power conversion and control systems. Features: N-Channel enhancement mode for efficient high-side switching. Low on-state resistance of 1.9Ω maximum at VGS=10V for reduced power losses. Low gate charge of typically 27nC for faster switching and lower drive power. Low Crss of typically 10pF for improved high-frequency performance. Specifications: Parameter Value Drain-Source Breakdown Voltage 800V Gate-Source Voltage ±30V Continuous Drain Current 6.6A Pulsed Drain Current 26.4A Power Dissipation 56W On-State Resistance (Max) 1.9Ω Gate Charge (Typical) 27nC Input Capacitance (Typical) 120pF Output Capacitance (Typical) 10pF Reverse Transfer Capacitance (Typical) 10pF Gate Threshold Voltage (Max) 5V Operating Junction Temperature -55-150°C Pin Configuration: Applications: Switched mode power supplies for efficient energy conversion. Active power factor correction circuits in AC-DC converters. Electronic lamp ballasts for lighting systems. LCD and LED television power management. Desktop PC power supplies. AC-DC merchant power supplies for consumer electronics. Package Include: 1x FQPF7N80C N-Channel MOSFET Transistor To-220F. Datasheet: FQPF7N80C
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